Growth morphology and surface‐acoustic‐wave measurements of AIN films on sapphire
Growth morphology and surface‐acoustic‐wave measurements of AIN films on sapphire
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蓝宝石上 AIN 薄膜的生长形貌和表面声波测量
DOI：
10.1063/1.322169
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发表时间：
1975
影响因子：
3.2
通讯作者：
Kou‐Wei Wang
中科院分区：
文献类型：
--
作者：
Jiankang Liu;K. Lakin;Kou‐Wei Wang
氮化铝外延薄膜的厚度大于10 μ，具有优异的机械和化学稳定性已在R面蓝宝石衬底上生长。讨论了蓝宝石衬底上AlN单晶的取向关系。用扫描电子显微镜检查生长的AlN膜表面，确定生长形态，并区分优质和劣质膜。测量表面声波耦合常数K2和传播速度Vs，厚度波长比t/λ=0.75，典型K2值为0.8%，Vs为6.1 km/sec。初步结果还表明，AlN-蓝宝石界面应变延伸到AlN膜中约1 μ。
Aluminum nitride epitaxial films of thicknesses greater than 10 μ with excellent mechanical and chemical stability have been grown on R‐plane sapphire substrates. The orientation relationship of single‐crystal AlN on sapphire is discussed. Examination of the as‐grown AlN film surface with a scanning electron microscope identifies the growth morphology and enables differentiation between good and poor quality films. The surface‐acoustic‐wave coupling constant K2 and propagation velocity Vs are measured out to a thickness‐to‐wavelength ratio t/λ=0.75 with typical K2 values of 0.8% and Vs of 6.1 km/sec. Preliminary results also indicate that AlN‐sapphire interfacial strain extends about 1 μ into the AlN film.