Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition.
Epitaxial Growth of GaAs Nanowires on Synthetic Mica by Metal-Organic Chemical Vapor Deposition.
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DOI：
10.1021/acsami.1c19236
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发表时间：
2022-01
影响因子：
9.5
通讯作者：
Aswani Gopakumar Saraswathy Vilasam;P. K. Prasanna;Xiaoming Yuan;Zahra Azimi;F. Kremer;C. Jagadish;S. Chakraborty;H. Tan
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文献类型：
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作者：
Aswani Gopakumar Saraswathy Vilasam;P. K. Prasanna;Xiaoming Yuan;Zahra Azimi;F. Kremer;C. Jagadish;S. Chakraborty;H. Tan
在低成本、轻重量和柔性衬底上外延生长具有优异光电性能的III-V族纳米线是未来光电器件设计和工程化的关键步骤。在我们的研究中，GaAs纳米线生长在合成云母，一个二维层状材料，通过气-液-固生长使用金属有机化学气相沉积。研究了温度、V/III比等基本外延生长参数对纳米线垂直产率的影响。在400 °C的最佳生长温度和V/III比为18时，垂直产率超过60%。使用各种技术，包括扫描电子显微镜，高分辨率透射电子显微镜，和高角度环形暗场成像的纳米线的结构特性进行了研究。在低温和高V/III比下生长的垂直纳米线具有[111] B极性的锌钛矿相。光致发光（PL）和时间分辨PL测量的光学性质进行了研究。第一性原理电子结构计算的密度泛函理论的框架内阐明的货车德瓦耳斯性质的纳米线/云母界面。我们的研究结果还表明，这些纳米线可以很容易地解除大块2D云母模板，提供了一个灵活的纳米线器件的途径。
The epitaxial growth of III-V nanowires with excellent optoelectronic properties on low-cost, light-weight, and flexible substrates is a key step for the design and engineering of future optoelectronic devices. In our study, GaAs nanowires were grown on synthetic mica, a two-dimensional layered material, via vapor-liquid-solid growth using metal-organic chemical vapor deposition. The effect of basic epitaxial growth parameters such as temperature and V/III ratio on the vertical yield of the nanowires is investigated. A vertical yield of over 60% is achieved at an optimum growth temperature of 400 °C and a V/III ratio 18. The structural properties of the nanowires are investigated using various techniques including scanning electron microscopy, high-resolution transmission electron microscopy, and high-angle annular dark-field imaging. The vertical nanowires grown at a low temperature and a high V/III ratio are found to have a zincblende phase with a [111] B polarity. The optical properties are investigated by photoluminescence (PL) and time-resolved PL measurements. First-principles electronic structure calculations within the framework of density functional theory elucidate the van der Waals nature of the nanowire/mica interface. Our results also show that these nanowires can be easily lifted off the bulk 2D mica template, providing a pathway for flexible nanowire devices.