Quantum regulation of Ge nanodot state by controlling barrier of the interface layer
Quantum regulation of Ge nanodot state by controlling barrier of the interface layer
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DOI：
10.1063/1.2216893
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发表时间：
2006-06
影响因子：
4
通讯作者：
Y. Nakayama;I. Matsuda;S. Hasegawa;M. Ichikawa
中科院分区：
文献类型：
--
作者：
Y. Nakayama;I. Matsuda;S. Hasegawa;M. Ichikawa
在氧化硅表面上排列的锗纳米点的量子化能量可以通过修饰界面原子层来调节。从局限空穴基态的能移与点尺寸的关系来评价局限电势，结果表明外延纳米点比非外延纳米点具有更低的局限电势垒。本研究结果为调整锗纳米点的量子化能级提供了一种新的方法，不仅可以通过其尺寸，还可以通过界面条件来调整。
Quantized energy in Ge nanodots aligned over oxidized Si surfaces could be regulated by modifying an interface atomic layer. The confining potential was evaluated from dot-size dependent energy shift of the ground state of confined holes, which revealed that epitaxial nanodots showed a lower confining potential barrier than nonepitaxial ones. The present results provide a new way to tune quantized energy levels of Ge nanodots not only by their size but also by interface condition.