Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)
Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)
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DOI：
10.1088/1361-6641/aad4cf
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发表时间：
2018-09-01
影响因子：
1.9
通讯作者：
Schulze, Joerg
中科院分区：
文献类型：
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作者：
Bechler, Stefan;Kern, Michal;Schulze, Joerg
Mn_5Ge_3可作为铁磁接触材料用于制备自旋电子器件。在这里，我们表明，Mn 5Ge 3可以制造一个简单的锗化过程中，通过蒸发锰上的未掺杂和掺杂的锗硅，然后通过热退火步骤，形成铁磁Mn 5Ge 3相。这种固相制备Mn 5Ge 3是一种稳健的工艺，对退火参数的依赖性较小。Mn 5Ge 3的形成可以使用具有不同掺杂水平的未掺杂以及高度掺杂的p-Ge和n-Ge来实现。Mn 5Ge 3的界面是原子级尖锐的，这导致非常低的接触电阻率< 1 × 10（-7）Ω cm（2）。
Mn5Ge3 can be used as a ferromagnetic contact material to fabricate spintronic devices. Here, we show that Mn5Ge3 can be fabricated with a simple germanidation process by evaporating Mn on undoped and doped Ge on Si followed by a thermal annealing step to form the ferromagnetic Mn5Ge3 phase. This solid phase preparation of Mn5Ge3 is a robust process with a minor dependence on the annealing parameters. The formation of Mn5Ge3 can be realized using undoped as well as highly doped p-Ge and n-Ge with different doping levels. The interface of Mn5Ge3 is atomically sharp which leads to very low contact resistivities < 1 x 10(-7) Omega cm(2).