GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE
GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE
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MOVPE 生长的高 InN 摩尔分数的 GaInN 基隧道结
DOI：
10.1002/pssb.201451507
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and Isamu Akasaki
中科院分区：
文献类型：
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作者：
Daichi Minamikawa;Masataka Ino;Shunsuke Kawai;Tetsuya Takeuchi;Satoshi Kamiyama;Motoaki Iwaya;and Isamu Akasaki
我们展示了金属有机气相外延(MOVPE)生长的高In摩尔分数(大于0.35)的低阻GaInN基隧道结。在标准尺寸(310 ×310 )发光二极管上生长了2 nm重掺镁Ga0.6In0.4N/15 nm重掺硅GaN隧道结。隧道结在20 mA(26A/cm~2)时下降0.06 V，对应于4 × 10−3Ωcm~2的电阻率。这一结果表明，MOVPE生长的隧道结的电阻率几乎与传统的p接触相当。我们还发现，随着电流密度的增加，隧道结的电阻率降低到4 × 10−4Ω cm2，最高可达5 kA/cm2。从具有隧道结的传输线模型试验结构的正向偏置I-V特性出发，提出了一种穿过中间带隙状态的隧道效应。
We demonstrated low‐resistive GaInN‐based tunnel junctions with high In mole fractions (over 0.35) grown by metalorganic vapor phase epitaxy (MOVPE). A 2 nm heavily Mg‐doped Ga0.6In0.4N/15 nm heavily Si‐doped GaN tunnel junction was grown on a standard‐sized (310 × 310 µm2) LED. The tunnel junction showed 0.06 V drop at 20 mA (26 A/cm2), corresponding to 4 × 10−3Ωcm2as the resistivity. This result indicates that MOVPE‐grown tunnel junctions showed an almost comparable resistivity as conventional p‐contact. We also found that the tunnel junction resistivity is decreased to 4 × 10−4Ω cm2with an increase of current density up to 5 kA/cm2. A tunneling through midgap states was suggested from forward‐biasedI–Vcharacteristics of transmission line model test structures with the tunnel junctions.