Semiconductor-cavity QED in high-Q regimes with q-deformed bosons
Semiconductor-cavity QED in high-Q regimes with q-deformed bosons
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DOI：
10.1103/physreva.63.023802
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发表时间：
2000-01
影响因子：
2.9
通讯作者：
Yu-xi Liu;C. P. Sun;S.X.Yu;D.L.Zhou
中科院分区：
文献类型：
--
作者：
Yu-xi Liu;C. P. Sun;S.X.Yu;D.L.Zhou
在q变形玻色子的框架下研究了高密度Frenkel激子与单模腔场的相互作用。结果表明，在高密度极限下，激子算符自然满足q变形玻色子对易关系。利用腔场和激子的缀饰态，得到了激子物理谱的解析表达式。我们还进行了数值研究，并将理论结果与实验结果进行了比较。
The high-density Frenkel excitons, which interact with a single-mode cavity field, are investigated in the framework of the q-deformed boson. It is shown that the q-deformed bosonic commutation relations are satisfied naturally by the exciton operators in the high-density limit. An analytical expression of the physical spectra of the excitons is obtained by using the dressed states of the cavity field and the excitons. We also give the numerical study and compare the theoretical results with the experimental results.