Growth Behavior of Dy/Cr Multilayers during Molecular-Beam Epitaxy and Their Structures
Growth Behavior of Dy/Cr Multilayers during Molecular-Beam Epitaxy and Their Structures
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分子束外延过程中 Dy/Cr 多层膜的生长行为及其结构
DOI：
10.1143/jjap.45.9194
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
Masahiko Yamamoto
中科院分区：
文献类型：
--
作者：
Y. Kamada;H. Tanino;T. Kingetsu;Masahiko Yamamoto
我们研究了Dy/Cr多层膜的生长和结构的Cr缓冲层上形成的MgO衬底上使用分子束外延技术。反射高能电子衍射和X射线衍射分析表明，可以形成的周期性结构的Dy和Cr层厚度的各种组合。第一Dy层在Cr缓冲层上外延生长，尽管它们不是单晶。然而，随后的层对于较小的厚度变成非晶或精细结晶，而对于较大的厚度变成多晶。对这些结果的原因进行了简要的讨论。
We studied the growth and structures of Dy/Cr multilayers on Cr buffer layers formed on MgO substrates using a molecular-beam epitaxy technique. Reflection high-energy electron diffraction and X-ray diffraction analyses reveal that the periodic structure can be formed for various combinations of Dy and Cr layer thicknesses. The first Dy layers grow epitaxially on the Cr buffer although they are not single crystals. However, the subsequent layers become amorphous or finely crystalline for smaller thicknesses and polycrystalline for larger ones. The causes for these results are briefly discussed.