Scanning tunneling microscopy and spectroscopy for studying cross-sectioned Si(100)
Scanning tunneling microscopy and spectroscopy for studying cross-sectioned Si(100)
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用于研究横截面 Si(100) 的扫描隧道显微镜和光谱学
DOI：
10.1116/1.586384
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发表时间：
1992
影响因子：
1.4
通讯作者：
J. Halbout
中科院分区：
文献类型：
--
作者：
M. Johnson;J. Halbout
扫描隧道显微镜 (STM) 和扫描隧道光谱 (STS) 用于研究通过异位劈裂 HF-dip 技术制备的 Si(100) 横截面。对于 n 型和 p 型体表面，测量的电流电压谱 (I/Vs) 与使用未钉扎表面计算的电流-电压谱 (I/Vs) 之间的一致性很好，因此表明制备的表面是未钉扎的并且模型是有效的。实验和计算的 I/V 都显示了电流的三个组成部分：价带态 (VB) 的隧道效应、掺杂态的隧道效应 (D) 以及导带态的隧道效应 (CB)。实验证明，与模型一致，I/V 的形状可以区分 n 型和 p 型表面。此外，该模型表明，通过测量掺杂态电流，D 分量 STM/STS 对 1018–1021 cm−3 范围内的载流子密度敏感。这表明这种异位切割样品制备可用于生产未...
Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are used to investigate a cross‐sectional surface of Si(100) prepared by an ex situ cleave HF‐dip technique. The agreement between the measured current–voltage spectra (I/Vs) and those calculated with an unpinned surface for both n‐ and p‐type bulk surfaces is good, thus indicating that the prepared surface is unpinned and the model is valid. Both the experimental and calculated I/Vs show three components of current: tunneling out of valence‐band states (VB), tunneling through dopant states (D), and tunneling into conduction‐band states (CB). As demonstrated by experiment, in agreement with the model, the shape of the I/Vs allows the discrimination of n‐type from p‐type surfaces. Furthermore, the model indicates that by measuring the dopant state current D‐component STM/STS is sensitive to the carrier density within the range of 1018–1021 cm−3. This suggests that this ex situ cleave sample preparation can be used to produce unpi...