Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
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DOI：
10.1109/ted.2007.911034
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发表时间：
2008
影响因子：
3.1
通讯作者：
S. Takagi;T. Iisawa;T. Tezuka;T. Numata;S. Nakaharai;N. Hirashita;Y. Moriyama;K. Usuda;E. Toyoda-E
中科院分区：
文献类型：
--
作者：
S. Takagi;T. Iisawa;T. Tezuka;T. Numata;S. Nakaharai;N. Hirashita;Y. Moriyama;K. Usuda;E. Toyoda-E
在不损失电路性能的前提下降低电源电压和功耗的有效方法是使用具有高载流子迁移率/速度的CMOS结构。在这篇文章中，我们将回顾我们在实现这些载流子传输增强型CMOS方面的最新方法。首先，从载流子速度和表面载流子浓度的角度介绍了MOSFET通流通道选择的基本概念--有效质量工程。在此基础上，介绍了采用三种沟道材料的MOSFET的关键问题、制作技术和器件性能，这三种沟道材料分别是具有单轴应变的Si(SiGe)、绝缘体上的Ge和III-V半导体。对于应变器件，讨论了单轴应变的重要性，以及与多栅结构的结合。还介绍了一种新的电子在(110)表面上的子带工程。对于GOI MOSFET，强调了Ge凝聚技术在制造各种基于Ge的器件方面的多功能性。此外，对于III-V半导体MOSFET，通过简单的理论计算，分析了低有效质量的优缺点。
An effective way to reduce supply voltage and resulting power consumption without losing the circuit performance of CMOS is to use CMOS structures using high carrier mobility/velocity. In this paper, our recent approaches in realizing these carrier-transport-enhanced CMOS will be reviewed. First, the basic concept on the choice of channels for increasing on current of MOSFETs, the effective-mass engineering, is introduced from the viewpoint of both carrier velocity and surface carrier concentration under a given gate voltage. Based on this understanding, critical issues, fabrication techniques, and the device performance of MOSFETs using three types of channel materials, Si (SiGe) with uniaxial strain, Ge-on-insulator (GOI), and III-V semiconductors, are presented. As for the strained devices, the importance of uniaxial strain, as well as the combination with multigate structures, is addressed. A novel subband engineering for electrons on (110) surfaces is also introduced. As for GOI MOSFETs, the versatility of the Ge condensation technique for fabricating a variety of Ge-based devices is emphasized. In addition, as for III-V semiconductor MOSFETs, advantages and disadvantages on low effective mass are examined through simple theoretical calculations.