Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET
Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET
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DOI：
10.1088/1674-4926/37/2/024008
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发表时间：
2016-01
影响因子：
5.1
通讯作者：
Yunpeng 云鹏 Jia 贾;Hongyuan 洪源 Su 苏;Rui 锐 Jin 金;Dongqing 冬青 Hu 胡;Yu 郁 Wu 吴
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文献类型：
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作者：
Yunpeng 云鹏 Jia 贾;Hongyuan 洪源 Su 苏;Rui 锐 Jin 金;Dongqing 冬青 Hu 胡;Yu 郁 Wu 吴
缓冲层的加入可以提高器件的二次击穿电压，从而提高单粒子烧毁（SEB）阈值电压。本文提出了一种N型线性掺杂缓冲层。根据准稳态雪崩模拟和重离子束模拟，结果表明，一个优化的线性掺杂缓冲层是关键。由于SEB是由重离子撞击引起的，在相同的偏压和缓冲层厚度下，优化的线性掺杂缓冲层的电场远低于优化的恒定掺杂缓冲层的电场。二次击穿电压和寄生双极导通电流比优化的恒定掺杂缓冲层高得多。因此，线性缓冲层更有利于提高器件的SEB性能。
The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance.