Impact of quantum mechanical effects on design of nano-scale narrow channel n- and p-type MOSFETs
Impact of quantum mechanical effects on design of nano-scale narrow channel n- and p-type MOSFETs
复制标题
量子力学效应对纳米级窄沟道 n 型和 p 型 MOSFET 设计的影响
DOI：
10.1109/iedm.2001.979618
复制
发表时间：
2001
期刊：
影响因子：
--
通讯作者：
T. Hiramoto
中科院分区：
文献类型：
--
作者：
H. Majima;Y. Saito;T. Hiramoto
介绍了量子力学效应对纳米窄沟道n型和p型mosfet的影响和器件设计准则。n型和p型源极/漏极的超窄沟道mosfet已经成功制造，并且在n型和p型器件中都清楚地观察到量子约束导致的阈值电压增加。通过解析计算，讨论了利用量子力学效应进行n型和p型mosfet阈值电压调节的器件设计。计算还表明，与<110>方向相比，<100>方向的超窄通道具有更高的迁移率，因此在器件设计中具有很大的优势。
The impact of quantum mechanical effects and device design guidelines in nano-scale narrow channel n-type and p-type MOSFETs is presented. Ultra-narrow channel MOSFETs with n- and p-type source/drain have been successfully fabricated and threshold voltage increase due to quantum confinement has been clearly observed in both n- and p-type devices. By analytical calculations, device design for threshold voltage adjustment in n- and p-type MOSFETs using quantum mechanical effects is discussed. The calculations also demonstrate that an ultra-narrow channel along the <100> direction has a large advantage in device design over the <110> direction due to higher mobility.