Electrical and optical control of single spins integrated in scalable semiconductor devices
Electrical and optical control of single spins integrated in scalable semiconductor devices
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DOI：
10.1126/science.aax9406
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发表时间：
2019-12-06
期刊：
影响因子：
56.9
通讯作者：
Awschalom, David D.
中科院分区：
文献类型：
--
作者：
Anderson, Christopher P.;Bourassa, Alexandre;Awschalom, David D.
碳化硅中的自旋缺陷具有与近红外自旋光子界面相结合的特殊电子自旋相干性的优点，所有这些都在适合现代半导体制造的材料中。利用这些优势，我们在市售的p-i-n结构中集成了高度相干的单个中性双空位自旋，并制造了二极管来调制缺陷的局部电环境。这些器件能够实现确定性的电荷状态控制和超过850千兆赫的广泛斯塔克位移调谐。我们表明，电荷耗尽的结果在缩小的光学线宽的50倍以上，接近寿命极限。这些结果证明了一种方法，用于减轻普遍存在的问题，在固态发射器的光谱扩散工程的电气环境，同时使用经典的半导体器件来控制可扩展的，基于自旋的量子系统。
Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.