Neutron and alpha particle-induced transients in 90 nm technology
Neutron and alpha particle-induced transients in 90 nm technology
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90 nm 技术中中子和 α 粒子引起的瞬态
DOI：
10.1109/relphy.2008.4558932
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
S. Wender
中科院分区：
文献类型：
--
作者：
B. Narasimham;M. Gadlage;B. Bhuva;peixiong zhao;L. Massengill;W. T. Holman;A. Witulski;Xiaowei Zhu;A. Balasubramanian;S. Wender
组合逻辑软错误是先进CMOS工艺中与环境相关的主要可靠性问题。确定逻辑软错误率（SER）的关键是中子和α粒子引起的单粒子瞬态（SET）脉冲宽度的详细知识，但这些脉冲宽度以前没有被测量过。使用以90纳米CMOS工艺制造的新型测试芯片获得的实验结果表明，SET宽度与合法逻辑信号的宽度相似。
Combinational logic soft errors are a major environment-related reliability issue in advanced CMOS processes. The key to determining logic soft error rates (SER) is detailed knowledge of neutron and alpha particle-induced single event transient (SET) pulse widths, but these pulse widths have not been measured previously. experimental results obtained using a novel test chip fabricated in a 90 -nm CMOS technology indicate the SET widths are similar to those of legitimate logic signals.