High-reflectivity GaN GaAlN Bragg mirrors at blue green wavelengths grown by molecular beam epitaxy
High-reflectivity GaN GaAlN Bragg mirrors at blue green wavelengths grown by molecular beam epitaxy
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DOI：
10.1063/1.123197
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发表时间：
1999-06-14
影响因子：
4
通讯作者：
Dang, LS
中科院分区：
文献类型：
--
作者：
Langer, R;Barski, A;Dang, LS
高反射GaN/GaAlN四分之一波布拉格反射镜，被设计成以蓝/绿波长为中心，已经通过分子束外延生长。以473 nm为中心的反射镜反射率高达93%，带宽达到22 nm。详细的x射线衍射测量使我们能够描述布拉格反射镜的结构参数。我们表明，尽管在我们的样品中发生了大量的应变松弛，但高反射率仍然是可能的。此外，我们发现异质界面处的生长中断对于获得高反射率至关重要。(c) 1999年美国物理研究所。[s0003 - 6951(99) 03824 - 3]。
Highly-reflective GaN/GaAlN quarter-wave Bragg mirrors, designed to be centered at blue/green wavelengths, have been grown by molecular beam epitaxy. The reflectivity for a mirror centered at 473 nm was as high as 93% and the bandwidth reached 22 nm. Detailed x-ray diffraction measurements allowed us to characterize the structural parameters of the Bragg mirrors. We show that, in spite of substantial strain relaxation occurring in our samples, high reflectivity is still possible. In addition, we show that growth interruption at the heterointerfaces is crucial for achieving high reflectivities. (c) 1999 American Institute of Physics. [S0003-6951(99)03824-3].