TSV Redundancy: Architecture and Design Issues in 3-D IC
TSV Redundancy: Architecture and Design Issues in 3-D IC
复制标题
DOI：
10.1109/tvlsi.2011.2107924
复制
发表时间：
2012-04-01
影响因子：
2.8
通讯作者：
Hwang, TingTing
中科院分区：
文献类型：
--
作者：
Hsieh, Ang-Chih;Hwang, TingTing
3D技术提供了许多优点，包括高密度、高带宽、低功耗和小形状因子。硅通孔（TSV）为芯片提供垂直方向的通信链路，是三维集成电路的关键设计问题。就像其他元件一样，TSV的制造和键合可能会失败。失败的TSV可随着待堆叠的裸片的数目增加而严重地增加成本且降低良率。提出了一种成本合理的冗余TSV结构。基于概率模型，一些有趣的发现报告。首先，当层中的TSV的数量小于1000时，层中的失效TSV的数量通常小于2，并且当层中的TSV的数量小于10000时，层中的失效TSV的数量通常小于5。假设在一个层中最多有2-5个失败的TSV。与一个冗余TSV分配给一个TSV块，我们提出的结构导致90%和95%的TSV块的大小为50和25，分别恢复率。最后，对整体成品率的分析表明，所提出的设计可以成功地恢复大部分的失败芯片，并提高了TSV的成品率为99.4%。
3-D technology provides many benefits including high density, high bandwidth, low-power, and small form-factor. Through Silicon Via (TSV), which provides communication links for dies in vertical direction, is a critical design issue in 3-D integration. Just like other components, the fabrication and bonding of TSVs can fail. A failed TSV can severely increase the cost and decrease the yield as the number of dies to be stacked increases. A redundant TSV architecture with reasonable cost is proposed in this paper. Based on probabilistic models, some interesting findings are reported. First, the number of failed TSVs in a tier is usually less than 2 when the number of TSVs in a tier is less than 1000 and less than 5 when the number of TSVs in a tier is less than 10 000. Assuming that there are at most 2-5 failed TSVs in a tier. With one redundant TSV allocated to one TSV block, our proposed structure leads to 90% and 95% recovery rates for TSV blocks of size 50 and 25, respectively. Finally, analysis on overall yield shows that the proposed design can successfully recover most of the failed chips and increase the yield of TSV to 99.4%.