High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAIAs multiple-quantum-well structures
High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAIAs multiple-quantum-well structures
复制标题
DOI：
10.1049/el:19850826
复制
发表时间：
1985-11
影响因子：
1.1
通讯作者：
Y. Kawamura;K. Wakita;H. Asahi
中科院分区：
文献类型：
--
作者：
Y. Kawamura;K. Wakita;H. Asahi
Well-resolved heavy-hole and light-hole exciton resonances in the absorption spectrum were observed at temperatures as high as 460 K in InGaAs/InAlAs multiple-quantum-well structures grown by molecular-beam epitaxy for the first time. Well-width dependences of the absorption spectrum and photoluminescence spectrum were also studied. The observed well-width dependences can be explained by monolayer fluctuation and alloy disorder.
