Measuring and tailoring the Dzyaloshinskii-Moriya interaction in perpendicularly magnetized thin films
Measuring and tailoring the Dzyaloshinskii-Moriya interaction in perpendicularly magnetized thin films
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DOI：
10.1103/physrevb.90.020402
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发表时间：
2014-07-16
影响因子：
3.7
通讯作者：
Marrows, C. H.
中科院分区：
文献类型：
--
作者：
Hrabec, A.;Porter, N. A.;Marrows, C. H.
研究了垂直磁化的Pt/Co/Pt和Pt/Co/Ir/Pt薄膜中的Dzyaloshinskiii-Moriya相互作用。为了研究铁磁体两侧产生的有效磁感应强度，我们采用了基于场驱动畴壁蠕变的方法。仅使用磁场消除了与诸如自旋霍尔效应或Rashba场的电流相关效应混合的可能性，以及由光刻图案化引起的复杂性。在顶部Co/Pt界面处插入Ir的双金属层允许我们访问来自顶部Co/Pt界面的双金属贡献。我们表明，插入一个薄的Ir层导致反转的有效的双金属作用在三明治的Co层的符号，因此不断地改变畴壁结构从右到左手的尼尔壁。使用两个DMI有源层提供了一种有效的方法，在薄的磁性薄膜的磁性调谐和增强。与外延Pt/Co/Pt多层膜的比较揭示了更多的光在多晶Pt/Co/Pt膜的起源，并展示了一个精致的灵敏度，在膜界面的原子结构的确切细节。
We investigate the Dzyaloshinskii-Moriya interactions (DMIs) in perpendicularly magnetized thin films of Pt/Co/Pt and Pt/Co/Ir/Pt. To study the effective DMI, arising at either side of the ferromagnet, we use a field-driven domain wall creep-based method. The use of only magnetic field removes the possibility of mixing with current-related effects such as spin Hall effect or Rashba field, as well as the complexity arising from lithographic patterning. Inserting an ultrathin layer of Ir at the top Co/Pt interface allows us to access the DMI contribution from the top Co/Pt interface. We show that the insertion of a thin Ir layer leads to reversal of the sign of the effective DMI acting on the sandwiched Co layer, and therefore continuously changes the domain wall structure from the right- to the left-handed Neel wall. The use of two DMI-active layers offers an efficient way of DMI tuning and enhancement in thin magnetic films. The comparison with an epitaxial Pt/Co/Pt multilayer sheds more light on the origin of DMI in polycrystalline Pt/Co/Pt films and demonstrates an exquisite sensitivity to the exact details of the atomic structure at the film interfaces.