Revealing a Zinc Oxide/Perovskite Luminescence QuenchingMechanism Targeting Low-Roll-offLight-Emitting Diodes
Revealing a Zinc Oxide/Perovskite Luminescence QuenchingMechanism Targeting Low-Roll-offLight-Emitting Diodes
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DOI:
10.1021/acs.jpclett.2c00564
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发表时间:
2022-04-07
影响因子:
5.7
通讯作者:
Sun, Baoquan
中科院分区:
文献类型:
--
作者:
Bai, Guilin;Zou, Yatao;Sun, Baoquan
Balanced charge injection is key to achieving perovskite light-emitting diodes(PeLEDs) with a low efficiency roll-offat a high brightness. The use of zinc oxide (ZnO)with a high electron mobility as the charge transport layers is desirable; however,photoluminescence (PL) quenching of a perovskite on ZnO always occurs. Here, a quasi-two-dimensional perovskite on ZnO is explored to uncover the PL quenching mechanism,mainly ascribed to the deprotonation of ammonium cations on the ZnOfilm in associationwith the decomposition of low-dimensional perovskite phases. Surprisingly, crystal plane-dependent PL quenching results indicate that the deprotonation rate strongly correlateswith the crystal orientation of the ZnO surface. We developed a strategy for suppressingperovskite PL quenching by incorporating an atomic layer deposited Al2O3onto the ZnOfilm. Consequently, an efficient inverted PeLED was achieved with a maximum externalquantum efficiency of 17.7% and a less discernible efficiency roll-offat a high currentdensity.