Single-Layer MoS2 Mechanical Resonators
Single-Layer MoS2 Mechanical Resonators
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DOI：
10.1002/adma.201303569
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发表时间：
2013-12-01
影响因子：
29.4
通讯作者：
Venstra, Warner J.
中科院分区：
文献类型：
--
作者：
Castellanos-Gomez, Andres;van Leeuwen, Ronald;Venstra, Warner J.
在这里，我们展示了单层二硫化钼机械谐振器的制造。所制造的谐振器具有10 MHz至30 MHz量级的基本谐振频率（取决于它们的几何形状），并且它们的品质因数在真空中在室温下约为~55。动力学性质清楚地表明单层MoS 2膜处于膜极限（即，张力占主导地位），与其较厚的对应物形成对比，后者表现为板块。我们还展示了我们的原子薄膜的非线性行为的清晰签名，从而为单层纳米机械谐振器的非线性动力学的未来调查提供了一个起点。
Here, we demonstrate the fabrication of single-layer MoS2 mechanical resonators. The fabricated resonators have fundamental resonance frequencies in the order of 10 MHz to 30 MHz (depending on their geometry) and their quality factor is about ~55 at room temperature in vacuum. The dynamical properties clearly indicate that monolayer MoS2 membranes are in the membrane limit (i.e., tension dominated), in contrast to their thicker counterparts, which behave as plates. We also demonstrate clear signatures of nonlinear behaviour of our atomically thin membranes, thus providing a starting point for future investigations on the nonlinear dynamics of monolayer nanomechanical resonators.