Evaluation of Strained Group IV Semiconductor Devices by Oil-Immersion Raman Spectroscopy
Evaluation of Strained Group IV Semiconductor Devices by Oil-Immersion Raman Spectroscopy
复制标题
通过油浸拉曼光谱评估应变 IV 族半导体器件
DOI：
10.1149/10904.0351ecst
复制
发表时间：
2022
期刊：
影响因子：
--
通讯作者：
and A. Ogura
中科院分区：
文献类型：
--
作者：
R. Yokogawa;C. -T. Chen;K. Toprasertpong;M. Takenaka;S. Takagi;and A. Ogura
应变技术是实现由IV族半导体（如硅（Si）、锗（Ge）和SiGe合金）组成的高性能逻辑器件的主要技术助推器之一。特别是，应变工程在改善金属氧化物半导体场效应晶体管（MOSFET）的性能方面发挥着重要作用，直到现在，从减少有效载流子质量的角度来看[1-3]。为了优化载流子迁移率和器件结构，对IV族半导体器件中施加的应变进行评估和理解逐渐变得不可或缺，几种应变评估技术如X射线衍射（XRD）[4]、会聚束电子衍射[5]和电子背散射图[6]已被提出并投入实际使用。拉曼光谱是测量声子能量最有效的技术之一。声子能量（拉曼位移）与应变和应力状态密切相关。可以进行高空间分辨率、非破坏性和高通量的精确应变测量。然而，传统的拉曼光谱学受限于基于拉曼偏振选择规则的应变信息[7]。拉曼测量通常在（001）族IV半导体背散射几何下应用。这种配置无法进行各向异性双向应力状态等复杂的应力测量。在本文中，我们展示了应变IV族半导体器件的应力评估的油浸拉曼光谱与高数值孔径（高-
Background and purposeStrain technique is one of the principal technology boosters for the realization of high-performance logic devices composed of group IV semiconductors such as silicon (Si), germanium (Ge), and SiGe alloy. In particular, strain engineering plays an important role in improving the performance of metal-oxide semiconductor field-effect transistors (MOSFETs) until now from the viewpoint of reducing the effective carrier mass [1-3]. It is gradually indispensable to evaluate and understand the applied strain in group IV semiconductor devices for the optimization of the carrier mobility and the device structure.Several strain evaluation techniques such as X-ray diffraction (XRD)[4], convergent-beam electron diffraction [5], and electron backscattering pattern [6], have been proposed and put into practical use. Raman spectroscopy is one of the most powerful techniques for phonon energy measurements. Phonon energy (Raman shift) is closely related to strain and stress states. The accurate strain measurement can be performed with high-spatial resolution nondestructive, and high throughput. However, conventional Raman spectroscopy is limited in strain information based on the Raman polarization selection rules [7]. Raman measurement is often applied under the (001) group IV semiconductors backscattering geometry. This configuration cannot allow to perform the complicated stress measurement such as anisotropic biaxial stress states. In this paper, we show stress evaluation of strained group IV semiconductor devices by oil-immersion Raman spectroscopy with the high-numerical-aperture (high-