Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells.
Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells.
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DOI：
10.1186/1556-276x-6-76
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发表时间：
2011-01-12
影响因子：
--
通讯作者：
Sakoda K
中科院分区：
文献类型：
--
作者：
Jo M;Duan G;Mano T;Sakoda K
研究了低温（200-450°C）封端对GaAs/AlGaAs量子威尔斯阱光学性质的影响。光致发光测量清楚地表明，在200°C下生长的AlGaAs覆盖层中形成了丰富的非辐射复合中心，而与高温覆盖层相比，在350°C以上的温度下生长的AlGaAs覆盖层的光学质量略有下降。此外，除了200° C加盖的样品外，光学质量可以通过生长后退火恢复而没有任何结构变化。
We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.