Lattice disorder and N elemental segregation in ion implanted GaN epilayer
Lattice disorder and N elemental segregation in ion implanted GaN epilayer
复制标题
离子注入GaN外延层中的晶格无序和N元素偏析
DOI：
10.1016/j.apsusc.2019.143911
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发表时间：
2020-01-01
影响因子：
6.7
通讯作者：
Xiong, An L.
中科院分区：
文献类型：
--
作者：
Li, B. S.;Liu, H. P.;Xiong, An L.
用常规的高分辨透射电子显微镜和电子能量损失谱研究了450 ℃、注量为4 × 10 ~（16）He ~+/cm ~（2）的He注入GaN外延层中的晶格无序和元素分布。高分辨率透射电子显微镜显示附着在He气泡上的位错环。位错环和堆垛层错的性质进行了仔细的高分辨率透射电子显微镜研究。电子能量损失谱显示损伤区形成了氮原子的缺陷和富集的Ga纳米晶，这与以前的报道是可比的。此外，在本实验结果中，首次研究了He+注入时氮的化学环境。研究结果将用于了解离子辐照在GaN中引起的损伤。
The lattice disorder and elemental distribution in He-implanted GaN epilayer at a fluence of 4 x 10(16) He+/cm(2) at 450 degrees C have been investigated by a combination of conventional, high resolution transmission electron microscopy and electron energy loss spectroscopy. High resolution transmission electron microscopy shows interstitial-type dislocation loops attached to He bubbles. The nature of dislocation loops and stacking faults are carefully investigated by high resolution transmission electron microscopy. Electron energy loss spectroscopy shows the deficit of N atoms and enriched Ga nanocrystals formed in the damage region, which is comparable with the previous reports. In addition, the chemical environment of nitrogen upon He+ implantation is first investigated in the present experimental results. The research results will be used for understanding ion irradiation-induced damage in GaN.