A Silicon-Based Closed-Loop 256-Pixel Near-Field Capacitive Sensing Array with 3-ppm Sensitivity and Selectable Frequency Shift Gain
A Silicon-Based Closed-Loop 256-Pixel Near-Field Capacitive Sensing Array with 3-ppm Sensitivity and Selectable Frequency Shift Gain
复制标题
具有 3 ppm 灵敏度和可选频移增益的硅基闭环 256 像素近场电容传感阵列
DOI：
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Mau
中科院分区：
文献类型：
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作者：
Jia Zhou;Chia;Christopher Chen;Jieqiong Du;R. Huang;R. Al Hadi;J. Hwang;Mau
提出了一种采用28纳米硅技术实现的二维电容式传感器电路，用于材料表征。该电路基于4.5 ghz正交振荡器，具有单电感和12.6 um间距的分布式电容器阵列。16×16传感器阵列设计具有最小的信号能量损失，以实现可扩展的设计。正交振荡器嵌入在跨线性环路中，频移放大高达36倍，采集带宽为2.4 MHz。单个像素的读出时间降至量化噪声底限以下，达到接近最佳窗口，而传感器保持3 ppm的灵敏度。混频器用于将高频分量下变频到中频。数字核心用于采集和处理数据。
This paper presents a two-dimensional capacitive sensor circuit implemented in 28-nm silicon technology for material characterization. The circuit is based on a 4.5-GHz quadrature oscillator with a single inductor and distributed capacitor array with 12.6-um pitch. The 16×16 sensor array is designed with minimal signal energy loss to enable scalable designs. The quadrature oscillator is embedded in a trans-linear loop for frequency shift amplification up to 36 times with an acquisition bandwidth of 2.4 MHz. The readout time for single pixel drops below the limit set by the quantization noise floor and reaches near optimal window, while the sensor maintains a sensitivity of 3 ppm. A mixer is used to down-convert the high-frequency component to an intermediate frequency. A digital core is used to acquire and process the data.
用于实时细胞跟踪和多站点检测的 2D 磁性传感器阵列，具有更高的鲁棒性和流速
DOI：
10.1109/cicc.2019.8780363
发表时间：
2019
期刊：
IEEE Custom Integrated Circuits Conference (CICC
影响因子：
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作者：
Tang H, Venkatesh S
通讯作者：
Tang H, Venkatesh S