Influence of radio frequency plasma cell conditions on the incorporation of nitrogen into GaAsN and GaInAsN
Influence of radio frequency plasma cell conditions on the incorporation of nitrogen into GaAsN and GaInAsN
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射频等离子体池条件对氮掺入 GaAsN 和 GaInAsN 的影响
DOI：
10.1116/1.1788681
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发表时间：
2004
影响因子：
1.4
通讯作者：
A. Ricard
中科院分区：
文献类型：
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作者：
H. Carrère;A. Arnoult;E. Bedel;A. Ricard
研究了射频等离子体池工作条件对体相GaAsN和GaInAsN量子阱的等离子体辅助分子束外延生长的影响。为了了解氮掺入和材料劣化的机制，用等离子体物理方法结合等离子体发射线和谱带的光学光谱进行了研究。原子和分子都参与了氮在生长材料中的结合。对于较高的氮气流量，结合最多的物种是N_2(X，v)基态的振动激发分子。N_2(X，V)基态的特征振动温度高于104K。在较低的氮气流量下，主要结合的物种是原子，最低流量和最高射频功率的氮气的解离分数高达0.7。最后，通过提高氮气压力，降低了电子温度，减小了离子损伤。
We have studied the influence of rf plasma cell operating conditions on the plasma assisted molecular beam epitaxy growth of bulk GaAsN and GaInAsN quantum wells. A plasma physics approach together with optical spectroscopy of the plasma emission lines and bands have been performed in order to understand the mechanisms of nitrogen incorporation and material deterioration. Both atoms and molecules do participate in the incorporation of N into the growing material. For high N2 flow rates, the species that mostly incorporate are vibrationaly excited molecules of the N2(X,v) ground state. The characteristic vibrational temperature of the N2(X,v) ground state has been found to be higher than 104K. For low N2 flow rates, the species that mostly incorporate are atoms and the dissociation fraction of N2 for the lowest flow rate and the highest rf power has been found to be up to 0.7. Finally, the ion damage has been decreased by increasing the N2 pressure, which induces a decrease of the electron temperature and ...
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y