Peak amplitude of target current determines deposition rate loss during high power pulsed magnetron sputtering
Peak amplitude of target current determines deposition rate loss during high power pulsed magnetron sputtering
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DOI：
10.1016/j.vacuum.2015.11.004
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发表时间：
2016-02-01
期刊：
影响因子：
4
通讯作者：
Hultman, L.
中科院分区：
文献类型：
--
作者：
Greczynski, G.;Hultman, L.
测量了 Ar 中 DCMS 和 HIPIMS 溅射过程中十种技术相关元素靶材的薄膜生长速率：Al、Si、Ti、Cr、Y、Zr、Nb、Hf、Ta 和 W，涵盖各种质量、电离能和溅射产率。令人惊讶的是，对于所有金属，功率归一化 HIPIMS 和 DCMS 的比率 a 随着峰值目标电流密度 J(T)(max) 的增加呈指数衰减。 J(T)(max) 对 alpha 的影响非常显着：在测试的最低 J(T)(max) 值 (0.04 A/cm(2)) 的限制下，alpha 近似于 1，而当 J(T)(max) 与 3 A/cm(2) 相似时，alpha 降至仅 0.12。除 Al 和 Si 外，α(J(T)(max)) 曲线重叠，表明 HIPIMS 中争议的速率损失在很大程度上由所有测试金属的 HIPIMS 目标电流的峰值幅度决定。电离目标物质的反向吸引力是造成 a 如此大变化的原因。 (C) 2015 Elsevier Ltd. 保留所有权利。
Film growth rates during DCMS and HIPIMS sputtering in Ar are measured for ten technologically relevant elemental target materials: Al, Si, Ti, Cr, Y, Zr, Nb, Hf, Ta, and W, spanning wide range of masses, ionization energies, and sputter yields. Surprisingly, the ratio of power-normalized HIPIMS and DCMS rates a decays exponentially with increasing peak target current density J(T)(max) for all metals. The effect of J(T)(max) on alpha is dramatic: alpha approximate to 1 in the limit of lowest J(T)(max) values tested (0.04 A/cm(2)) and decreases to only 0.12 with J(T)(max) similar to 3 A/cm(2). With the exception of Al and Si, alpha(J(T)(max)) curves overlap indicating that the debated rate loss in HIPIMS is to large extent determined by the peak amplitude of the HIPIMS target current for all tested metals. Back attraction of ionized target species is responsible for such large variation in a. (C) 2015 Elsevier Ltd. All rights reserved.