Growth and characterization of Si and Ge clusters on ordered C60 overlayers
Growth and characterization of Si and Ge clusters on ordered C60 overlayers
复制标题
有序 C60 覆盖层上 Si 和 Ge 团簇的生长和表征
DOI：
10.1116/1.589452
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发表时间：
1997
影响因子：
1.4
通讯作者：
D. M. Chen
中科院分区：
文献类型：
--
作者：
D. Klyachko;D. M. Chen
我们使用原位制造的有序C60覆盖层在Si和Ge表面作为模板，分别生长孤立的Ge和Si簇。通过扫描隧道显微镜、俄歇光谱和低能电子衍射对生长过程进行了监测和表征。Si和Ge团簇在C60层的间隙中成核，并在聚结之前达到典型的横向尺寸约10 a。小Si团簇的俄歇谱显示出s对称态的增强贡献，反映了团簇中Si原子的非四面体配位。孤立团簇的室温隧道光谱显示，在尖端/团簇/衬底双势垒结中，带隙增大与量子约束效应一致，电导量子化归因于库仑阻塞现象。
We use in situ fabricated ordered C60 overlayers on Si and Ge surfaces as templates to grow isolated Ge and Si clusters, respectively. The growth processes are monitored and characterized by scanning tunneling microscopy, Auger spectroscopy, and low energy electron diffraction. Si and Ge clusters nucleate in the interstices of the C60 layer, and reach a typical lateral size of ∼10 A before coalescing. Auger spectra of small Si clusters show an enhanced contributions from states of s symmetry, reflecting nontetrahedral coordination of Si atoms in clusters. Room temperature tunneling spectroscopy of isolated clusters reveals an enlarged band gap consistent with the effect of quantum confinement, and a quantized conductance attributable to the Coulomb blockade phenomena in a tip/cluster/substrate double barrier junction.