Resist shrink characterization methodology for more accurate CD metrology
Resist shrink characterization methodology for more accurate CD metrology
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抗蚀剂收缩表征方法可实现更准确的 CD 计量
DOI：
10.1117/12.2614219
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Weiji Wang
中科院分区：
文献类型：
--
作者：
M. Breton;K. Petrillo;Jennifer Church;Luciana Meli;J. Fullam;S. Sieg;R. Lallement;N. Felix;S. Levi;Susan Zollinger;F. Levitov;S. Hand;J. Osborne;Weiji Wang
这项工作提出了一种方法来表征从各种SEM着陆能量和成像条件的光刻胶的CD收缩的程度，使用AFM计量和蚀刻后图案转移作为方法来评估真正的物理CD。对于具有变化的抗蚀剂体积的1D和2D特征的抗蚀剂收缩可以通过各种计量技术和蚀刻后尺寸数据来量化。一旦表征，SEM暴露期间的材料响应可以在任何CDSEM数据比较或OPC模型中解释。
This work proposes a methodology to characterize the extent of photoresists’ CD shrink from various SEM landing energy and imaging conditions, using both AFM metrology and post-etch pattern transfer as methods to evaluate the true physical CD. The resist shrink for both 1D and 2D features with varying resist volumes can be quantified through the various metrology techniques and post-etch dimensional data. Once characterized, material response during SEM exposure can be accounted for in any CDSEM data comparison or OPC model.