Temperature dependence of two-terminal local magnetoresistance in Co-based Heusler alloy/Ge lateral spin-valve devices
Temperature dependence of two-terminal local magnetoresistance in Co-based Heusler alloy/Ge lateral spin-valve devices
复制标题
钴基霍斯勒合金/Ge横向自旋阀器件两端局域磁阻的温度依赖性
DOI：
10.1109/tmag.2022.3145393
复制
发表时间：
2022
影响因子：
2.1
通讯作者：
Hamaya Kohei
中科院分区：
文献类型：
--
作者：
Yamada Michihiro;Naito Takahiro;Sumi Kazuaki;Sawano Kentarou;Hamaya Kohei
研究了三种不同铁磁/锗肖特基隧道接触的锗基横向自旋阀（LSV）器件的二端局域磁电阻（MR）效应的温度特性.当我们插入一个0.7 nm厚的Fe层之间的钴基Heusler合金和Ge界面LSV设备，本地MR信号的幅度显着提高从低温到室温。然而，MR比的温度依赖性仍然是大的，即使对于具有Fe插入的LSV器件。从分析的基础上的标准理论，温度依赖的MR比可以解释在FM接触的热激发自旋波（法律）。在Ge基LSV器件中，由于FM/Ge肖特基隧道接触具有近似线性的特性和低的界面电阻，其接触电阻对温度的依赖性很小，所以双端MR比衰减的物理根源与四端非局域自旋信号衰减的物理根源相同.
We investigate temperature dependence of two-terminal local magnetoresistance (MR) effect for germanium (Ge)-based lateral spin-valve (LSV) devices with three different ferromagnet (FM)/Ge Schottky tunnel contacts. When we insert a 0.7-nm-thick Fe layer between Co-based Heusler alloy and Ge interfaces in LSV devices, the magnitude of the local MR signals is significantly improved from low temperatures to room temperature. However, the temperature dependence of the MR ratio is still large even for LSV devices with Fe insertion. From the analysis based on the standard theory, the temperature-dependent MR ratio can be interpreted in terms of thermally excited spin waves (law) in FM contacts. The physical origin of the decay of the two-terminal MR ratio in Ge-based LSV devices is the same as that of the four-terminal nonlocal spin signals because small temperature dependence of contact resistance is demonstrated in FM/Ge Schottky tunnel contacts which show almost linear–characteristics and low interface resistance.