Magnetization reversal in GaMnAs layers studied by Kerr effect
Magnetization reversal in GaMnAs layers studied by Kerr effect
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DOI：
10.1063/1.1506204
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发表时间：
2002-10-07
影响因子：
4
通讯作者：
Ilver, L
中科院分区：
文献类型：
--
作者：
Hrabovsky, D;Vanelle, E;Ilver, L
本文利用磁光克尔效应研究了（Ga，Mn）As薄膜的磁化反转。一个斯通-Wohlfart模型，修改考虑到与成核和传播现象相关的磁反转不连续性的存在，使我们能够估计大部分的特征常数。这些结果证明了类似于在金属磁性层中观察到的反转行为（相干旋转，随后是成核传播过程）。在T=20 K时的动态研究表明，随着dH/dt的增加，体系的矫顽力有明显的增加.这种效应与Mn磁性离子在晶格中的随机分布有关。(C)2002年美国物理学会。
In this letter, magnetization reversal is investigated in (Ga,Mn)As thin films using the magneto-optical Kerr effect. A Stoner-Wohlfart model, modified to take into account the existence of magnetic reversal discontinuities associated with nucleation and propagation phenomena allows us to estimate most of the characteristic constants. These results demonstrate a reversal behavior analogous to that observed in metallic magnetic layers (coherent rotation followed by a nucleation propagation process). The dynamic study at T=20 K shows a strong increase of the coercivity with the increase of dH/dt. This effect is related to the random distribution of Mn magnetic ions in the lattice. (C) 2002 American Institute of Physics.