Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation
Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation
复制标题
使用双极玻尔兹曼输运方程的球谐展开式对热载流子退化进行建模
DOI：
10.1109/iedm.2012.6479138
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
T. Grasser
中科院分区：
文献类型：
--
作者：
M. Bina;K. Rupp;S. Tyaginov;O. Triebl;T. Grasser
最近的研究已经清楚地表明，MOS晶体管由于热载流子的退化是高度敏感的载流子的能量分布。这些分布只能通过同时求解两种载流子类型的玻尔兹曼输运方程（BTE）来获得足够的细节。对于预测模拟，能量分布必须通过包括全带结构、碰撞电离（II）、电子电子散射（EE）以及少数载流子与多数载流子的相互作用来彻底解决。我们证明，这个具有挑战性的问题可以有效地解决使用确定性的方法的基础上的球谐函数展开（SHE）的BTE。
Recent studies have clearly demonstrated that the degradation of MOS transistors due to hot carriers is highly sensitive to the energy distribution of the carriers. These distributions can only be obtained in sufficient detail by the simultaneous solution of the Boltzmann transport equation (BTE) for both carrier types. For predictive simulations, the energy distributions have to be thoroughly resolved by including the fullband structure, impact ionization (II), electron electron scattering (EE), as well as the interaction of minority carriers with the majority carriers. We demonstrate that this challenging problem can be efficiently tackled using a deterministic approach based on the spherical harmonics expansion (SHE) of the BTE.