Ultrafast sub-30-fs all-optical switching based on gallium phosphide
Ultrafast sub-30-fs all-optical switching based on gallium phosphide
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DOI:
10.1126/sciadv.aaw3262
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发表时间:
2019-06-01
期刊:
影响因子:
13.6
通讯作者:
Maier, Stefan A.
中科院分区:
文献类型:
--
作者:
Grinblat, Gustavo;Nielsen, Michael P.;Maier, Stefan A.
Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (lambda > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub30- fs (full width at half maximum) transmission modulation of up to similar to 70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by the Z-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.