Investigation of unique total ionizing dose effects in 0.2 µm partially-depleted silicon-on-insulator technology
Investigation of unique total ionizing dose effects in 0.2 µm partially-depleted silicon-on-insulator technology
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DOI：
10.1016/j.nima.2014.01.052
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发表时间：
2013-07
影响因子：
1.4
通讯作者：
Yanwei Zhang;Huixiang Huang;Dawei Bi;M. Tang;Zhengxuan Zhang
中科院分区：
文献类型：
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作者：
Yanwei Zhang;Huixiang Huang;Dawei Bi;M. Tang;Zhengxuan Zhang
研究了用商用0.2µm SOI工艺制造的部分耗尽绝缘体上硅(SOI)器件的总电离剂量(TID)辐射效应。实验结果显示了一个独到的现象：对于前栅和后栅晶体管来说，“导通”辐照偏置配置都是最糟糕的偏置。为了理解这一机理，提出了一个电荷分布模型。我们认为，器件的性能退化是由于辐射诱导的正电荷俘获在浅槽隔离(STI)氧化物的底角。此外，通过比较不同漏偏压下短沟道和长沟道器件的辐照响应，发现短沟道晶体管的漏电流和阈值电压退化较大。用偶极子理论解释了TID增强的短沟道效应。
The total ionizing dose (TID) radiation effects of partially-depleted (PD) silicon-on-insulator (SOI) devices fabricated in a commercial 0.2 µm SOI process were investigated. The experimental results show an original phenomenon: the “ON” irradiation bias configuration is the worst-case bias for both front-gate and back-gate transistors. To understand the mechanism, a charge distribution model is proposed. We consider that the performance degradation of the devices is due to the radiation-induced positive charge trapped in the bottom corner of Shallow Trench Isolation (STI) oxide. In addition, by comparing the irradiation responses of short and long channel devices under different drain biases, the short channel transistors show a larger degeneration of leakage current and threshold voltage. The dipole theory is introduced to explain the TID enhanced short channel effect.