Bipolar-driven large linear magnetoresistance in silicon at low magnetic fields
Bipolar-driven large linear magnetoresistance in silicon at low magnetic fields
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DOI：
10.1103/physrevb.87.245301
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发表时间：
2013-06-03
影响因子：
3.7
通讯作者：
Shiraishi, Masashi
中科院分区：
文献类型：
--
作者：
Delmo, Michael P.;Shikoh, Eiji;Shiraishi, Masashi
在室温下实验观察到电子注入p型硅在极低磁场下的大线性磁阻。在电子占主导地位的空间电荷输运体系中会产生较大的线性磁流变，其中电子与空穴密度比的磁场调制控制磁流变，如硅器件中霍尔系数的磁场依赖性所示。与单极硅器件中空间电荷诱导的磁流变效应相反，在单极硅器件中，大线性磁流变是由非均匀性诱导的，我们的研究结果为非磁性半导体中大线性磁流变的机制提供了不同的见解，而非基于非均匀性模型。这种方法使均匀半导体在低磁场下表现出大的线性磁流变率，到目前为止，这种情况只出现在具有强非均匀性的半导体中。
Large linear magnetoresistance (MR) in electron-injected p-type silicon at very low magnetic field is observed experimentally at room temperature. The large linear MR is induced in electron-dominated space-charge transport regime, where the magnetic field modulation of electron-to-hole density ratio controls the MR, as indicated by the magnetic field dependence of Hall coefficient in the silicon device. Contrary to the space-charge-induced MR effect in unipolar silicon device, where the large linear MR is inhomogeneity-induced, our results provide a different insight into the mechanism of large linear MR in nonmagnetic semiconductors that is not based on the inhomogeneity model. This approach enables homogeneous semiconductors to exhibit large linear MR at low magnetic fields that until now has only been appearing in semiconductors with strong inhomogeneities.