Effect of the Annealing Temperature on Dielectric Properties of Bi_<1.5>Zn_<1.0>Nb_<1.5>O_7 Films Prepared by MOCVD
Effect of the Annealing Temperature on Dielectric Properties of Bi_<1.5>Zn_<1.0>Nb_<1.5>O_7 Films Prepared by MOCVD
复制标题
退火温度对MOCVD制备Bi_<1.5>Zn_<1.0>Nb_<1.5>O_7薄膜介电性能的影响
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
Hiroshi Uchida and Seiichiro Koda
中科院分区：
文献类型：
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作者：
Hiroshi Funakubo;Shingo Okaura;Muneyau Suzuki;Hiroshi Uchida and Seiichiro Koda
