Phase modulated magnetoelectric delta-E effect sensor for sub-nano tesla magnetic fields

Phase modulated magnetoelectric delta-E effect sensor for sub-nano tesla magnetic fields
复制标题

DOI:
10.1063/1.4932575
复制
发表时间:
2015-10-12
影响因子:
4
通讯作者:
Faupel, F.
Faupel, F.
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Zabel, S.;Kirchhof, C.;Faupel, F.

文献摘要

被引文献

相似文献

我们提出了一种谐振式微机械磁场传感器,它利用磁感应弹性模量的变化,即delta-E效应。该传感器基于磁电薄膜复合材料,在室温和低频下具有高灵敏度。悬臂被电激励并由一个2pm的压电层读出。非晶态(Fe90Co10)(78)Si12B10薄膜的弹性随磁化强度的变化而变化,从而导致悬臂梁谐振频率的偏移。传感器在7.6 kHz或47.4 kHz的第一或第二横向弯曲模式下工作。在磁场偏置下,在20 Hz时的检测极限为140 pTHz(-0.5),在没有外部偏置场的情况下,该传感器的检测极限为1 nTHz(-0.5),超过所有同类设计一个数量级。(C) 2015 AIP出版有限责任公司
We present a resonant micromechanical magnetic field sensor, which utilizes the magnetically induced change in elastic modulus, i.e, the delta-E effect. The sensor is based on magnetoelectric thin film composites, resulting in high sensitivity at room temperature and at low frequencies. The cantilever is electrically excited and read out by a 2 pm AIN piezoelectric layer. Depending on its magnetization, the 2 pm thin film of amorphous (Fe90Co10)(78)Si12B10 changes its elasticity, which results in a shift of the cantilever's resonance frequency. The sensor is operated in the first or second transversal bending mode at 7.6 kHz or 47.4 kHz. With a limit of detection of 140 pTHz(-0.5) at 20 Hz under a magnetic bias field and 1 nTHz(-0.5) without external bias field, this sensor exceeds all comparable designs by one order of magnitude. (C) 2015 AIP Publishing LLC.