Transparent Conductive Oxides as Near-IR Plasmonic Materials: The Case of Al-Doped ZnO Derivatives
Transparent Conductive Oxides as Near-IR Plasmonic Materials: The Case of Al-Doped ZnO Derivatives
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DOI：
10.1021/ph500118y
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发表时间：
2014-08-01
期刊：
影响因子：
7
通讯作者：
Catellani, Alessandra
中科院分区：
文献类型：
--
作者：
Calzolari, Arrigo;Ruini, Alice;Catellani, Alessandra
利用第一性原理计算，我们研究了Al：ZnO透明导电氧化物中近红外等离子体激元活动的起源。我们的研究结果预测的等离子体频率和自由电子密度作为Al掺杂的函数，并与最近的实验结果一致的现实值。我们还提供了一个微观的洞察力在Al：ZnO/ZnO界面的特征长度，可以通过实验测量的表面等离子体激元的形成。与标准等离子体金属的直接比较强调了透明导电氧化物作为紧凑且低损耗等离子体材料用于光电子应用和电信的前景。
Using first-principles calculations, we investigate the origin of near infrared plasmonic activity in Al:ZnO transparent conducting oxides. Our results predict realistic values for the plasma frequency and the free electron density as a function of the Al doping and in agreement with recent experimental results. We also provide a microscopic insight on the formation of surface-plasmon polaritons at the Al:ZnO/ZnO interfaces in terms of characteristic lengths that can be measured by experiments. The direct comparison with standard plasmonic metals underlines the promising capabilities of transparent conducting oxides as compact and low-loss plasmonics materials for optoelectronic applications and telecommunications.