High-Throughput Area-Selective Spatial Atomic Layer Deposition of SiO 2 with Interleaved Small Molecule Inhibitors and Integrated Back-Etch Correction for Low Defectivity
High-Throughput Area-Selective Spatial Atomic Layer Deposition of SiO 2 with Interleaved Small Molecule Inhibitors and Integrated Back-Etch Correction for Low Defectivity
复制标题
具有交错小分子抑制剂和集成背蚀校正的 SiO 2 高通量区域选择性空间原子层沉积，以实现低缺陷率
DOI：
10.1002/adma.202301204
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发表时间：
2023
影响因子：
29.4
通讯作者：
Karasulu B
中科院分区：
文献类型：
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作者：
Karasulu B
在相同的空间原子层沉积(ALD)工具中，开发了一种首创的二氧化硅区域选择沉积工艺，包括薄膜沉积与小分子抑制剂(SMI)的交错曝光和背面刻蚀校正步骤。这些方面的协同作用导致了高选择性和高产量的SiO_2选择性沉积高达5~23 nm，具有SiO_2生长区和ZnO非生长区。X射线光电子能谱(XPS)和低能离子散射谱(LEIS)证实了这种选择性。从实验和理论上比较了乙基丁酸和新戊酸两种不同的SMI的选择性。密度泛函理论(DFT)计算表明，使用两种SMI的选择性表面官能化主要是由热力学控制的，而使用三甲基乙酸时获得的更好的选择性可以解释为其比乙基丁酸更高的堆积密度。通过在其他起始表面(Ta2O5、ZrO2等)上使用三甲基乙酸作为SMI。并通过对选择性的考察，证明了羧酸缓蚀剂在不同底物上的广泛应用。人们认为，目前的结果突出了SMI特性中的微妙之处，如尺寸、几何形状和封装，以及交错背部刻蚀步骤，这些步骤是开发更有效的高选择性沉积工艺策略的关键。
A first‐of‐its‐kind area‐selective deposition process for SiO2is developed consisting of film deposition with interleaved exposures to small molecule inhibitors (SMIs) and back‐etch correction steps, within the same spatial atomic layer deposition (ALD) tool. The synergy of these aspects results in selective SiO2deposition up to ~23 nm with high selectivity and throughput, with SiO2growth area and ZnO nongrowth area. The selectivity is corroborated by both X‐ray photoelectron spectroscopy (XPS) and low‐energy ion scattering spectroscopy (LEIS). The selectivity conferred by two different SMIs, ethylbutyric acid, and pivalic acid has been compared experimentally and theoretically. Density Functional Theory (DFT) calculations reveal that selective surface functionalization using both SMIs is predominantly controlled thermodynamically, while the better selectivity achieved when using trimethylacetic acid can be explained by its higher packing density compared to ethylbutyric acid. By employing the trimethylacetic acid as SMI on other starting surfaces (Ta2O5, ZrO2, etc.) and probing the selectivity, a broader use of carboxylic acid inhibitors for different substrates is demonstrated. It is believed that the current results highlight the subtleties in SMI properties such as size, geometry, and packing, as well as interleaved back‐etch steps, which are key in developing ever more effective strategies for highly selective deposition processes.