Nano-grained ZrB2 thin films as a high-performance diffusion barrier in Cu metallization
Nano-grained ZrB2 thin films as a high-performance diffusion barrier in Cu metallization
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DOI：
10.1039/c5ra20864e
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发表时间：
2016
期刊：
影响因子：
3.9
通讯作者：
Meng Yu;Z. Song;Yanhuai Li;K. Xu
中科院分区：
文献类型：
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作者：
Meng Yu;Z. Song;Yanhuai Li;K. Xu
采用射频磁控溅射法制备了纳米晶ZrB 2薄膜，并对其热稳定性和扩散阻挡性能进行了研究。结果表明，沉积态ZrB 2薄膜在700 °C下仍能有效地阻止Cu和Si原子的混合。但在725 °C下发生大量原子扩散，导致高电阻CuSix化合物。Cu 3Si相在750 °C下形成，并且其与Si衬底具有外延关系，如Cu 3Si（000）//Si（11）和Cu 3Si（100）//Si（1）。虽然纳米晶ZrB 2薄膜的结晶在700 °C下得到增强，但是高的热稳定性使得其有可能被开发作为Cu互连中的扩散阻挡层。
Nano-grained ZrB2 thin films are prepared by radio-frequency (rf) magnetron sputtering and, the thermal stability and the diffusion barrier performance are evaluated at elevated temperatures. It is demonstrated that the as-deposited ZrB2 thin films can effectively block the intermixing of Cu and Si atoms up to 700 °C. But substantial atomic diffusion occurs at 725 °C resulting in high-resistance CuSix compounds. A Cu3Si phase is formed at 750 °C and it has an epitaxial relationship with Si substrates, like, Cu3Si (000)//Si (11) and Cu3Si (100)//Si (1). Although the crystallization of nano-grained ZrB2 thin films is enhanced at 700 °C, the high thermal stability makes it possible to be exploited as a diffusion barrier in Cu interconnects.