Geometry optimization of TMR current sensors for on-chip IC testing
Geometry optimization of TMR current sensors for on-chip IC testing
复制标题
DOI：
10.1109/tmag.2005.854813
复制
发表时间：
2005-10-01
影响因子：
2.1
通讯作者：
Talen, W
中科院分区：
文献类型：
--
作者：
Le Phan, K;Boeve, H;Talen, W
在本文中，我们证明了隧道磁阻（TNIR）元件可以用作敏感的芯片上的电流传感器在微安到毫安的范围内的基于电流的IC测试，如电源引脚测试和静态I-DD电流（IDDQ）测试。该传感器可以集成在含有磁性随机存取存储器的CMOS IC中。TNIR电流传感器与各种横向尺寸（从亚微米到微米）安排在惠斯通电桥已实现和分析。一个典型的灵敏度为2.5（mVN）/mA和5.5 μ A的电流分辨率已被观察到。传感器的几何形状对传感器的灵敏度，滞后和温度上升，由于焦耳加热的影响进行了研究。
In this paper, we demonstrate that tunnel magnetoresistive (TNIR) elements can be used as sensitive on-chip current sensors in the microampere to milliampere range for current-based IC testing such as power-pin testing and quiescent I-dd current (IDDQ) testing. The sensor can be integrated in CMOS ICs containing magnetic random access memory. TNIR current sensors with various lateral dimensions (from submicrometer to micrometer) arranged in a Wheatstone bridge have been realized and analyzed. A typical sensitivity of 2.5 (mVN)/mA and a current resolution of 5.5 mu A have been observed. The influence of the sensor geometry on sensor sensitivity, hysteresis, and temperature rise due to Joule heating has been investigated.