Growth-mode induced defects in epitaxial SrTiO_3 thin films grown on single crystal LaAlO_3 by a two-step PLD process
Growth-mode induced defects in epitaxial SrTiO_3 thin films grown on single crystal LaAlO_3 by a two-step PLD process
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DOI：
10.1557/jmr.2010.82
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发表时间：
2011-03
影响因子：
2.7
通讯作者：
D. Su;Tomoaki Yamada;R. Gysel;A. Tagantsev;P. Muralt;N. Setter;N. Jiang
中科院分区：
文献类型：
--
作者：
D. Su;Tomoaki Yamada;R. Gysel;A. Tagantsev;P. Muralt;N. Setter;N. Jiang
采用脉冲激光沉积法在（001）LaAlO_3衬底上生长了SrTiO_3（STO）外延薄膜，并对其进行了透射电镜观察。我们发现，部分失配位错是主要的界面缺陷，而平面缺陷是STO薄膜中的主要缺陷。我们的研究结果表明，三维岛模式占主导地位的STO膜的生长。
We grew epitaxial SrTiO_3 (STO) thin films on (001) LaAlO_3 substrates via a two-step procedure using pulsed laser deposition and studied them with transmission electron microscopy in plane-view and cross-sectional samples. We found that partial misfit dislocations are the main interfacial defects, whereas planar defects are the main defects in STO films. Our results suggest that a three-dimensional island mode dominates the growth of the STO film.