Photoluminescence Investigation of Doped Asymmetric Coupled Quantum Wells
Photoluminescence Investigation of Doped Asymmetric Coupled Quantum Wells
复制标题
掺杂不对称耦合量子阱的光致发光研究
DOI：
10.1143/jjap.34.5637
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
H.B.Mao,et al.
中科院分区：
文献类型：
--
作者：
H.B.Mao,et al.
本文报道了部分掺杂非对称耦合量子阱(ACQW)结构的光致发光研究。详细研究了不同Al_(0.28)Ga_(0.72)As势垒厚度下非共振隧穿速率与激发功率的关系。当势垒较厚(~gt；12 nm)时，20 nm Al0.2Ga0.8As的发光强度远大于5.5 nm掺硅GaAs势垒的发光强度。这一结果表明，光激发载流子优先向宽势垒驰豫，宽势垒的态密度比掺杂的窄势垒大。结合光致发光光谱讨论了不同的子带间弛豫过程之间的竞争。
We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different Al0.28Ga0.72As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm Al0.2Ga0.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (>12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra.