Chemical Nucleation of Diamond Films.
Chemical Nucleation of Diamond Films.
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DOI：
10.1021/acsami.6b08286
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发表时间：
2016-09
影响因子：
9.5
通讯作者：
S. Mandal;E. Thomas;T. Jenny;O. Williams
中科院分区：
文献类型：
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作者：
S. Mandal;E. Thomas;T. Jenny;O. Williams
由于薄膜和衬底之间的表面能差异较大，再加上碳氢自由基的粘附系数较低，纳米晶金刚石在外源衬底上生长通常导致成核密度较低。因此，需要一种播种技术来实现无针孔和薄合并膜。本文提出了一种基于2,2-二氨基甘烷的非金刚石基底上生长金刚石的化学成核方法。经过含碳DVA处理后，经过化学处理的晶圆暴露在低功率密度等离子体中，即孵育阶段，以促进金刚石成核位点的形成，随后是高功率密度生长机制，以产生聚结薄膜。所得薄膜显示出高结晶度，而拉曼光谱表明高质量的金刚石具有低sp2含量。
With the large differences in surface energy between film and substrate in combination with the low sticking coefficient of hydrocarbon radicals, nanocrystalline diamond growth on foreign substrates typically results in poor nucleation densities. A seeding technique is therefore required to realize pinhole-free and thin coalesced films. In this work, a chemical nucleation method for growth of diamond on nondiamond substrates based on 2,2-divinyladamantane is shown. After treating with the carbon-containing DVA, the chemically treated wafers were exposed to low-power-density plasma, known as the incubation phase, to facilitate the formation of diamond nucleation sites followed by a high-power-density growth regime to produce coalesced films. The resulting films demonstrate high crystallinity, whereas the Raman spectra suggest high-quality diamond with low sp2 content.