3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade
3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade
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DOI：
10.1016/j.nima.2012.07.058
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发表时间：
2012-12-01
影响因子：
1.4
通讯作者：
Zorzi, Nicola
中科院分区：
文献类型：
--
作者：
Da Via, Cinzia;Boscardin, Maurizio;Zorzi, Nicola
电极完全或部分穿透硅衬底的3D硅传感器已经在欧洲和美国的不同加工设施中成功制造出来。3D制造的关键是使用等离子体微加工来蚀刻窄深的垂直开口，允许掺杂剂扩散到引脚结中并形成电极。自2009年以来，3D ATLAS研发合作的四个工业合作伙伴开始共同努力，旨在为大型强子对撞机升级，特别是ATLAS像素可插入b层（IBL）的3D传感器生产提供一个共同的设计和兼容的处理策略。在这个计划于2013年安装的项目中，一个新的层将被插入到距离质子束3.4厘米的地方，在ATLAS实验中现有的像素层中。因此，探测器靠近相互作用点将需要传感器和前端电子设备的新辐射硬技术。后者被称为FE-I4，由IBM处理，是迄今为止设计的最大的前端，其表面接近4厘米(2)。在碰撞键合之前和之后，对来自多个晶圆的3D器件的性能进行了评估。本文讨论了三维传感器原型设计阶段的关键设计要点、器件制造方案和质量保证测试。(c) 2012年欧洲核子研究中心。Elsevier B.V.版权所有。
3D silicon sensors, where electrodes penetrate the silicon substrate fully or partially, have successfully been fabricated in different processing facilities in Europe and USA. The key to 3D fabrication is the use of plasma micro-machining to etch narrow deep vertical openings allowing dopants to be diffused in and form electrodes of pin junctions. Similar openings can be used at the sensor's edge to reduce the perimeter's dead volume to as low as similar to 4 mu m. Since 2009 four industrial partners of the 3D ATLAS R&D Collaboration started a joint effort aimed at one common design and compatible processing strategy for the production of 3D sensors for the LHC Upgrade and in particular for the ATLAS pixel Insertable B-Layer (IBL). In this project, aimed for installation in 2013, a new layer will be inserted as close as 3.4 cm from the proton beams inside the existing pixel layers of the ATLAS experiment. The detector proximity to the interaction point will therefore require new radiation hard technologies for both sensors and front end electronics. The latter, called FE-I4, is processed at IBM and is the biggest front end of this kind ever designed with a surface of similar to 4 cm(2). The performance of 3D devices from several wafers was evaluated before and after bump-bonding. Key design aspects, device fabrication plans and quality assurance tests during the 3D sensors prototyping phase are discussed in this paper. (C) 2012 CERN. Published by Elsevier B.V. All rights reserved.