The effect of surface nucleation on the evolution of crystalline microstructure during solid phase crystallization of amorphous Si films on SiO2
The effect of surface nucleation on the evolution of crystalline microstructure during solid phase crystallization of amorphous Si films on SiO2
复制标题
SiO2 上非晶硅薄膜固相结晶过程中表面成核对晶体微观结构演化的影响
DOI：
10.1063/1.119437
复制
发表时间：
1997
影响因子：
4
通讯作者：
S. Min
中科院分区：
文献类型：
--
作者：
M. Ryu;Seokjin Hwang;Tae Hoon Kim;Ki;S. Min
研究了低压化学气相沉积法（LPCVD）在SiO2表面沉积非晶态Si （a-Si）薄膜固相结晶过程中表面成核对晶体微观结构演变的影响。在a-Si沉积初期，氧原子的加入抑制了界面（a-Si/SiO2）的成核，从而观察到表面成核现象。结果表明，表面成核的多晶Si （poly-Si）具有等轴晶粒，晶粒尺寸约为3 ~ 5 μm；界面成核的多晶具有椭圆晶粒，晶粒尺寸约为0.3 ~ 1 μm。
The effect of surface nucleation on the evolution of crystalline microstructure during the solid phase crystallization (SPC) of an amorphous Si (a-Si) film, deposited by low pressure chemical vapor deposition (LPCVD) on SiO2, has been investigated. The surface nucleation phenomenon was observed by suppressing the interface (a-Si/SiO2) nucleation by the incorporation of oxygen atoms during the initial deposition period of a-Si. It was found that the surface-nucleated polycrystalline Si (poly-Si) had equiaxial grains with the size of about 3–5 μm, while interface-nucleated one had elliptical grains with the size of about 0.3–1 μm.