Field emission from quasi-aligned SiCN nanorods

Field emission from quasi-aligned SiCN nanorods
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DOI:
10.1063/1.126431
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发表时间:
2000-04
影响因子:
4
通讯作者:
F. Tarntair;C. Wen;L. C. Chen;Jan-Jan Wu-Jan;K. Chen;P. Kuo;Shou-Zen Chang;Y. Chen;W. Hong;Huang-Chung Cheng
F. Tarntair;C. Wen;L. C. Chen;Jan-Jan Wu-Jan;K. Chen;P. Kuo;Shou-Zen Chang;Y. Chen;W. Hong;Huang-Chung Cheng
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
F. Tarntair;C. Wen;L. C. Chen;Jan-Jan Wu-Jan;K. Chen;P. Kuo;Shou-Zen Chang;Y. Chen;W. Hong;Huang-Chung Cheng

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本文报道了准定向氮化硅碳纳米棒的制备及其场发射性能。SiCN纳米棒通过使用两阶段生长方法形成,其中第一阶段涉及通过电子回旋共振等离子体增强化学气相沉积形成包含高密度纳米晶体的缓冲层,并且第二阶段涉及使用微波等离子体增强化学气相沉积以用于沿着优选取向的高生长速率。应该注意的是,SiCN纳米棒的生长是自介导的,而不需要添加任何金属催化剂。扫描电子显微镜观察表明,SiCN纳米棒为六边棒状单晶,长约1 ~ 1.5 μm,直径约20-50 nm。能量色散X射线光谱表明,纳米棒含有约26原子。%的Si,50 at. %的C,和24 at. %的N。特征电流-电压测量表明,低的开启场为10 V/μm。场发射电流密度超过...
We report on the preparation and field emission properties of quasi-aligned silicon carbon nitride (SiCN) nanorods. The SiCN nanorods are formed by using a two-stage growth method wherein the first stage involves formation of a buffer layer containing high density of nanocrystals by electron cyclotron resonance plasma enhanced chemical vapor deposition and the second stage involves using microwave plasma enhanced chemical vapor deposition for high growth rate along a preferred orientation. It should be noted that growth of the SiCN nanorods is self-mediated without the addition of any metal catalyst. Scanning electron microscopy shows that the SiCN nanorods are six-side-rod-shaped single crystals of about 1–1.5 μm in length and about 20–50 nm in diameter. Energy dispersive x-ray spectrometry shows that the nanorod contains about 26 at. % of Si, 50 at. % of C, and 24 at. % of N. Characteristic current–voltage measurements indicate a low turn-on field of 10 V/μm. Field emission current density in excess of ...