Field emission from quasi-aligned SiCN nanorods
Field emission from quasi-aligned SiCN nanorods
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DOI:
10.1063/1.126431
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发表时间:
2000-04
影响因子:
4
通讯作者:
F. Tarntair;C. Wen;L. C. Chen;Jan-Jan Wu-Jan;K. Chen;P. Kuo;Shou-Zen Chang;Y. Chen;W. Hong;Huang-Chung Cheng
中科院分区:
文献类型:
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作者:
F. Tarntair;C. Wen;L. C. Chen;Jan-Jan Wu-Jan;K. Chen;P. Kuo;Shou-Zen Chang;Y. Chen;W. Hong;Huang-Chung Cheng
We report on the preparation and field emission properties of quasi-aligned silicon carbon nitride (SiCN) nanorods. The SiCN nanorods are formed by using a two-stage growth method wherein the first stage involves formation of a buffer layer containing high density of nanocrystals by electron cyclotron resonance plasma enhanced chemical vapor deposition and the second stage involves using microwave plasma enhanced chemical vapor deposition for high growth rate along a preferred orientation. It should be noted that growth of the SiCN nanorods is self-mediated without the addition of any metal catalyst. Scanning electron microscopy shows that the SiCN nanorods are six-side-rod-shaped single crystals of about 1–1.5 μm in length and about 20–50 nm in diameter. Energy dispersive x-ray spectrometry shows that the nanorod contains about 26 at. % of Si, 50 at. % of C, and 24 at. % of N. Characteristic current–voltage measurements indicate a low turn-on field of 10 V/μm. Field emission current density in excess of ...