Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States
Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States
复制标题
DOI：
10.1109/jeds.2018.2855731
复制
发表时间：
2018-01-01
影响因子：
2.3
通讯作者：
Lee, Myoung-Jae
中科院分区：
文献类型：
--
作者：
Lee, Hyeon-Jun;Abe, Katsumi;Lee, Myoung-Jae
研究了氧化物半导体薄膜晶体管中局域类受主缺陷态引起的非对称电学性质。此外，我们还报道了依赖于漏极电压水平的非对称输运特性的起源。特别是，我们观察到这些非对称性强烈地依赖于这个水平。数值计算表明，局域势垒降低发生在漏极边缘。
Asymmetrical electrical properties induced by local acceptor-like defect states in oxide semiconductor thin-film transistors are investigated. In addition, we report on the origin of asymmetrical transport characteristics depending on the drain voltage level. In particular, we observe that these asymmetrical properties depend strongly on this level. Numerical calculations demonstrate that potential barrier lowering in the local area occurs at the drain electrode's edge.