High Electron Mobility of Nb-Doped SrTiO3 Films Stemming from Rod-Type Sr Vacancy Clusters
High Electron Mobility of Nb-Doped SrTiO3 Films Stemming from Rod-Type Sr Vacancy Clusters
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DOI：
10.1021/acsnano.5b05720
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发表时间：
2015-11-01
期刊：
影响因子：
17.1
通讯作者：
Yamamoto, Takahisa
中科院分区：
文献类型：
--
作者：
Kobayashi, Shunsuke;Mizumukai, Yuki;Yamamoto, Takahisa
在SrTiO 3薄膜中实现高电子迁移率具有重要意义，特别是在氧化物半导体、场致超导体和热电发电机等技术应用方面。实现高电子迁移率的一种途径是生长具有低缺陷浓度的高质量SrTiO 3膜。另一种提高迁移率的方法是对晶体施加应变。然而，通过这些方法可获得的最大迁移率受到外部和内部因素（例如，当前可用的制造技术和最大晶体应变）的限制。在本文中，我们展示了一个独特的晶体工程方法来改变铌掺杂SrTiO 3薄膜的基础上故意引入Sr空位簇的应变。发现以这种方式制备的Nb掺杂的SrTiO 3薄膜显示出显著增强的电子迁移率（超过53 000 cm（2）V（-1）s（-1））。这种缺陷工程的方法，预计不仅在SrTiO 3膜，而且在薄膜和块状晶体的其他钙钛矿型材料的电子迁移率的调整和增强。
Achieving high electron mobility in SrTiO3 films is of significant interest, particularly in relation to technological applications such as oxide semiconductors, field-induced superconductors, and thermoelectric generators. One route to achieving high electron mobility is growth of high quality SrTiO3 films with low defect concentrations. Another approach for mobility enhancement is applying a strain to the crystal. However, the maximum mobilities obtainable by these approaches are limited both by external and internal factors (currently available fabrication techniques, and maximum crystal strain, for example). In this paper, we demonstrate a unique crystal engineering approach to alter the strain in Nb-doped SrTiO3 films based on the deliberate introduction of Sr vacancy clusters. Nb-doped SrTiO3 films produced in this manner are found to exhibit remarkably enhanced electron mobilities (exceeding 53 000 cm(2) V(-1)s(-1)). This method of defect engineering is expected to enable tuning and enhancement of electron mobilities not only in SrTiO3 films, but also in thin films and bulk crystals of other perovskite-type materials.