DREAM: Data Representation Aware of Damage to Extend the Lifetime of MLC NAND Flash Memory
DREAM: Data Representation Aware of Damage to Extend the Lifetime of MLC NAND Flash Memory
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发表时间：
2018
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通讯作者：
T. Ye;Shenggang Wan;Xubin He;Weijun Xiao;C. Xie
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作者：
T. Ye;Shenggang Wan;Xubin He;Weijun Xiao;C. Xie
MLC NAND闪存使用内存单元的电压来表示位。高电压对电池造成的损害比低电压更大。利用不需要存储位的可用空间可减少这些高压的使用，从而延长MLC内存的寿命。但是，受一个单个单元电压表示位的常规数据表示规则的限制，高电压仍用于高概率。为了充分探索自由空间在降低高压使用情况下的潜力，我们提出了一种新颖的数据表示损害，名为Dream。梦使用多个单元的电压组合而不是一个单元的电压来表示位。它可以通过灵活地替换某些单元中的某些单元中的高压来表示相同的位，而在可用空间可用时，其他单元格中的电压低。因此，高电压会较少使用损坏，并且MLC内存的寿命延长。理论分析结果证明了梦的有效性和效率。
MLC NAND flash memory uses the voltages of the memory cells to represent bits. High voltages cause much more damage on the cells than low voltages. The free space that need not store bits is leveraged to reduce the usage of those high voltages and thus extend the lifetime of the MLC memory. However, limited by the conventional data representation rule that represents bits by the voltage of one single cell, the high voltages are still used in a high probability. To fully explore the potential of the free space on reducing the usage of high voltages, we propose a novel data representation aware of damage, named DREAM. DREAM uses the voltage combinations of multiple cells instead of the voltage of one single cell to represent bits. It enables to represent the same bits through flexibly replacing the high voltages in some cells with the low voltages in other cells when free space is available. Hence, high voltages which cause more damage are less used and the lifetime of the MLC memory is extended. Theoretical analysis results demonstrate the effectiveness and efficiency of DREAM.