Optimization of the tradeoff between switching speed of the internal diode and on-resistance in gold- and platinum-implanted power metal-oxide-semiconductor devices
Optimization of the tradeoff between switching speed of the internal diode and on-resistance in gold- and platinum-implanted power metal-oxide-semiconductor devices
复制标题
DOI：
10.1109/16.168728
复制
发表时间：
1992-12
影响因子：
3.1
通讯作者：
Marisa Francesca Catania;F. Frisina;N. Tavolo;G. Ferla;S. Coffia;S. U. Campisano
中科院分区：
文献类型：
--
作者：
Marisa Francesca Catania;F. Frisina;N. Tavolo;G. Ferla;S. Coffia;S. U. Campisano
铂和金的扩散已被用来降低功率金属氧化物半导体器件中的少数载流子寿命，以改善内部二极管的开关特性。采用金薄膜沉积和金或铂离子注入技术来实现预扩散源。对于给定的寿命缩短，由正向特性决定的器件导通电阻的伴随增加在注入金器件中比在沉积金器件中更小；通过使用铂注入，导通电阻的增加甚至更小。因此，功率 MOS 器件制造中铂的离子注入在器件的静态特性与其内部二极管的开关速度之间提供了更好的折衷。 >
Diffusion of platinum and gold has been used to reduce minority-carrier lifetime in power metal-oxide-semiconductor devices in order to improve the switching characteristics of the internal diode. Gold thin-film deposition and gold- or platinum-ion implantation techniques have been adopted to realize the prediffusion source. For a given reduction in lifetime, the concomitant increase in the on-resistance of the device, as determined by the forward characteristics, is smaller in gold-implanted than in gold-deposited devices; an even smaller increase in on-resistance is obtained by using platinum implantation. Therefore, ion implantation of platinum in power MOS devices fabrication provides a better tradeoff between static characteristics of the devices and switching speed of their internal diodes. >