Modeling Reset, Set, and Read Operations in Nanoscale Ge 2 Sb 2 Te 5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties
Modeling Reset, Set, and Read Operations in Nanoscale Ge 2 Sb 2 Te 5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material Properties
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使用电场和温度相关材料属性对纳米级 Ge 2 Sb 2 Te 5 相变存储器件中的重置、设置和读取操作进行建模
DOI：
10.1002/pssr.202200419
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发表时间：
2023
期刊：
影响因子：
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通讯作者：
Gokirmak, Ali
中科院分区：
文献类型：
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作者：
Kashem, Md Tashfiq Bin;Scoggin, Jake;Woods, Zachary;Silva, Helena;Gokirmak, Ali
在此，描述了用于相变存储器器件的有限元模拟框架，其使用作为电场和温度的函数的动态材料参数和MEMS模型同时求解电流连续性、MEMS加热和结晶-非晶化动力学。在这个最新的模型中，结合了稳定的非晶Ge 2Sb 2 Te 5（GST）的电场和温度依赖性电导率模型，该模型是从GST线电池上进行的实验中获得的，以研究蘑菇电池的读取，重置和设置操作。分析了电流极性、加热器高度、复位脉冲上升和下降时间、接入设备配置和环境温度的影响。模拟结果预测，由于热电效应，不同电流极性的复位电流要求会发生2倍变化。加热器高度在热损耗中起着重要作用;加热器高度增加4倍，复位电流降低约16%。环境温度升高会导致实现相同复位/置位电阻对比度所需的复位功率线性降低。
Herein, a finite element simulation framework for phase‐change memory devices that simultaneously solves for current continuity, electrothermal heating, and crystallization–amorphization dynamics using electrothermal models and dynamic material parameters that are functions of electric field and temperature is described. In this latest model, an electric field‐ and temperature‐dependent electrical conductivity model of stable amorphous Ge2Sb2Te5(GST) obtained from experiments performed on GST line cells to study Read, Reset, and Set operations of mushroom cells is incorporated. The effects of current polarity, heater height, Reset pulse rise and fall times, access device configuration, and ambient temperature are analyzed. The simulation results predict a 2x change in Reset current requirements with different current polarity due to thermoelectric effects. Heater height plays a significant role in thermal losses; ≈16% decrease in Reset current for 4x increase in the heater height is obtained. Increase in the ambient temperature results in a linear decrease in the Reset power required to achieve the same Reset/Set resistance contrast.